http://www.tandfonline.com/doi/full/10. ... 17.1341723Having monopolised the optical data storage industry since the very beginning, phase change materials are now being intensively explored for next-generation electronic data storage, referred to as phase change random access memory (PCRAM).
Because phase change materials are electrically programmable; capable of reversibly switching between two stable structural phases of contrasting electrical properties, besides data storage they also enable data computation.
For these reasons, PCRAM envisages to overcome both miniaturisation and data flow bottlenecks, challenges which current silicon charge-based technology is failing to cope with.
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